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MTD5P06VT4G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTD5P06VT4G
   Маркировка: 5P06V
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 12 nC
   trⓘ - Время нарастания: 26 ns
   Cossⓘ - Выходная емкость: 140 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.45 Ohm
   Тип корпуса: DPAK

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MTD5P06VT4G Datasheet (PDF)

 ..1. Size:75K  onsemi
 mtd5p06v-d mtd5p06vt4 mtd5p06vt4g.pdf

MTD5P06VT4G MTD5P06VT4G

MTD5P06VPreferred DevicePower MOSFET5 Amps, 60 Volts P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and powerhttp://onsemi.commotor controls, these devices are particularly well suited for bridgecircuits where diode speed and com

 ..2. Size:828K  cn vbsemi
 mtd5p06vt4g.pdf

MTD5P06VT4G MTD5P06VT4G

MTD5P06VT4Gwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S

 6.1. Size:245K  motorola
 mtd5p06vrev1a.pdf

MTD5P06VT4G MTD5P06VT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD5P06V/DDesigner's Data SheetMTD5P06VTMOS V.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 5 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.450 OHMtance area product about o

 6.2. Size:212K  motorola
 mtd5p06v.pdf

MTD5P06VT4G MTD5P06VT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD5P06V/DDesigner's Data SheetMTD5P06VTMOS V.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 5 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.450 OHMtance area product about o

 7.1. Size:208K  motorola
 mtd5p06erev1.pdf

MTD5P06VT4G MTD5P06VT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD5P06E/DDesigner's Data SheetMTD5P06ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 5.0 AMPERES 60 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.55 OHMenergy in the avalanche a

 7.2. Size:183K  motorola
 mtd5p06e.pdf

MTD5P06VT4G MTD5P06VT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD5P06E/DDesigner's Data SheetMTD5P06ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 5.0 AMPERES 60 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.55 OHMenergy in the avalanche a

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