MTD6P10E MOSFET Datasheet: P-Ch, 100V, 6A. Full specification with pinout and replacement list

MTD6P10E Specs and Replacement

Type Designator: MTD6P10E

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 154 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.66 Ohm

Package: DPAK

MTD6P10E substitution

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MTD6P10E datasheet

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6P10E/D Designer's Data Sheet MTD6P10E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 6.0 AMPERES 100 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.66 OHM energy in the avalanche a... See More ⇒

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MTD6P10E Preferred Device Power MOSFET 6 Amps, 100 Volts P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor control... See More ⇒

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