MTD6P10E MOSFET. Datasheet pdf. Equivalent
Type Designator: MTD6P10E
Marking Code: T6P10E
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15.3 nC
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 154 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.66 Ohm
Package: DPAK
MTD6P10E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTD6P10E Datasheet (PDF)
mtd6p10e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD6P10E/DDesigner's Data SheetMTD6P10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 6.0 AMPERES100 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.66 OHMenergy in the avalanche a
mtd6p10e.pdf
MTD6P10EPreferred DevicePower MOSFET6 Amps, 100 VoltsP-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,converters and PWM motor control
mtd6p10et4.pdf
MTD6P10ET4www.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
