MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD6P10E/DDesigner's Data SheetMTD6P10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 6.0 AMPERES100 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.66 OHMenergy in the avalanche a

MTD6P10EPreferred DevicePower MOSFET6 Amps, 100 VoltsP-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,converters and PWM motor control

MTD6P10ET4www.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch