MTE05N10FP MOSFET Datasheet: N-Ch, 100V, 60A. Full specification with pinout and replacement list

MTE05N10FP Specs and Replacement

Type Designator: MTE05N10FP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 660 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm

Package: TO-220FP

MTE05N10FP substitution

- MOSFET ⓘ Cross-Reference Search

MTE05N10FP datasheet

..1. Size:349K cystek
mte05n10fp.pdf pdf_icon

Spec. No. C928FP Issued Date 2015.03.16 CYStech Electronics Corp. Revised Date Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTE05N10FP ID @ VGS=10V, TC=25 C 109A 5.9m RDSON(TYP) @ VGS=10V, ID=20A 6.2m RDSON(TYP) @ VGS=7V, ID=20A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Ch... See More ⇒

6.1. Size:277K cystek
mte05n10e3.pdf pdf_icon

Spec. No. C928E3 Issued Date 2013.11.04 CYStech Electronics Corp. Revised Date 2013.11.12 Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTE05N10E3 ID 140A 5.9m RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 6.2m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Charact... See More ⇒

8.1. Size:277K cystek
mte05n08e3.pdf pdf_icon

... See More ⇒

9.1. Size:468K 1
mte050n15brv8.pdf pdf_icon

Spec. No. C033V8 Issued Date 2017.10.05 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTE050N15BRV8 BVDSS 150V ID @ TC=25 C, VGS=10V 12.4A ID @ TA=25 C, VGS=10V 4.3A 49.1m VGS=10V, ID=3.4A Features RDSON(TYP) 58.5m VGS=6V, ID=3.3A Single Drive Requirement Low On-resistance Fast Switchi... See More ⇒