MTE130N20J3
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTE130N20J3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 85
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.195
Ohm
Package:
TO-252
MTE130N20J3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTE130N20J3
Datasheet (PDF)
..1. Size:369K cystek
mte130n20j3.pdf 
Spec. No. : C966J3 Issued Date : 2014.12.23 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 200VMTE130N20J3 ID@VGS=10V, TC=25C 18A ID@VGS=10V, TA=25C 1.9A 156m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement Fast Switching Characteristic Pb-free lead pla
5.1. Size:341K cystek
mte130n20fp.pdf
Spec. No. : C966FP Issued Date : 2014.05.13 CYStech Electronics Corp.Revised Date : 2014.05.15 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFETMTE130N20FP BVDSS 200VID @ VGS=10V 17ARDS(ON)@VGS=10V, ID=9A 150 m(typ) Features Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side insulating v
5.2. Size:394K cystek
mte130n20kj3.pdf
Spec. No. : C952J3 Issued Date : 2014.02.27 CYStech Electronics Corp.Revised Date : 2014.03.05 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE130N20KJ3 BVDSS 200VID 18A142m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic Pb-free lead plating and
5.3. Size:296K cystek
mte130n20kfp.pdf
Spec. No. : C952FP Issued Date : 2013.12.24 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFETMTE130N20KFP BVDSS 200VID @ VGS=10V 17ARDS(ON)@VGS=10V, ID=9A 134 m(typ) Features ESD protected Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side in
5.4. Size:337K cystek
mte130n20kf3.pdf
Spec. No. : C952F3 Issued Date : 2014.06.03 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE130N20KF3 BVDSS 200VID 18A143m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic Pb-free lead plating and RoHS compli
5.5. Size:355K cystek
mte130n20ke3.pdf
Spec. No. : C952E3 Issued Date : 2013.12.27 CYStech Electronics Corp.Revised Date : 2014.03.05 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE130N20KE3 BVDSS 200VID 18A143m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic RoHS compliant package
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