MTE130N20J3 MOSFET Datasheet: N-Ch, 200V, 18A. Full specification with pinout and replacement list

MTE130N20J3 Specs and Replacement

   Type Designator: MTE130N20J3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm
   Package: TO-252

MTE130N20J3 substitution

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MTE130N20J3 datasheet

..1. Size:369K cystek
mte130n20j3.pdf pdf_icon

Spec. No. C966J3 Issued Date 2014.12.23 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 200V MTE130N20J3 ID@VGS=10V, TC=25 C 18A ID@VGS=10V, TA=25 C 1.9A 156m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement Fast Switching Characteristic Pb-free lead pla... See More ⇒

5.1. Size:341K cystek
mte130n20fp.pdf pdf_icon

Spec. No. C966FP Issued Date 2014.05.13 CYStech Electronics Corp. Revised Date 2014.05.15 Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE130N20FP BVDSS 200V ID @ VGS=10V 17A RDS(ON)@VGS=10V, ID=9A 150 m (typ) Features Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side insulating v... See More ⇒

5.2. Size:394K cystek
mte130n20kj3.pdf pdf_icon

Spec. No. C952J3 Issued Date 2014.02.27 CYStech Electronics Corp. Revised Date 2014.03.05 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTE130N20KJ3 BVDSS 200V ID 18A 142m RDSON(TYP) @ VGS=10V, ID=9A Features Low Gate Charge Simple Drive Requirement ESD Diode Protected Gate Fast Switching Characteristic Pb-free lead plating and... See More ⇒

5.3. Size:296K cystek
mte130n20kfp.pdf pdf_icon

Spec. No. C952FP Issued Date 2013.12.24 CYStech Electronics Corp. Revised Date Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE130N20KFP BVDSS 200V ID @ VGS=10V 17A RDS(ON)@VGS=10V, ID=9A 134 m (typ) Features ESD protected Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side in... See More ⇒