MTE150P20H8 PDF and Equivalents Search

 

MTE150P20H8 Specs and Replacement

Type Designator: MTE150P20H8

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 189 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.174 Ohm

Package: DFN5X6

MTE150P20H8 substitution

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MTE150P20H8 datasheet

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 mte150p20h8.pdf pdf_icon

MTE150P20H8

Spec. No. C992H8 Issued Date 2014.12.27 CYStech Electronics Corp. Revised Date Page No. 1/10 P-Channel Enhancement Mode Power MOSFET BVDSS -200V MTE150P20H8 ID@VGS=-10V, TC=25 C -15A ID@VGS=-10V, TA=25 C -2.3A VGS=-10V, ID=-3.8A 137m Features RDSON(TYP) VGS=-6V, ID=-3.6A 142m Single Drive Requirement Low On-resistance Fast Switching Chara... See More ⇒

Detailed specifications: MTD6N15T4GV, MTD6N20ET4, MTD6N20ET4G, MTD6P10E, MTDP9620Q8, MTDP9933KQ8, MTE05N10FP, MTE130N20J3, IRFP250N, MTE55N10FP, MTE55N20J3, MTE6D5N12B0E3, MTE8D0N08H8, MTG9N50E, MTH13N45, MTH13N50, MTH15N35

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