All MOSFET. MTE55N10FP Datasheet

 

MTE55N10FP Datasheet and Replacement


   Type Designator: MTE55N10FP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 76.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: TO-220FP
 

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MTE55N10FP Datasheet (PDF)

 ..1. Size:350K  cystek
 mte55n10fp.pdf pdf_icon

MTE55N10FP

Spec. No. : C959FP Issued Date : 2014.11.25 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFETBVDSS 100VMTE55N10FP ID 18ARDS(ON)@VGS=10V, ID=18A 55.4 m(typ)RDS(ON)@VGS=7V, ID=12A 56.1 m(typ)Description The MTE55N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switch

 8.1. Size:366K  cystek
 mte55n20j3.pdf pdf_icon

MTE55N10FP

Spec. No. : C976J3 Issued Date : 2014.09.17 CYStech Electronics Corp.Revised Date : 2014.10.02 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200VMTE55N20J3 ID@VGS=10V 26AVGS=10V, ID=11A 48m RDSON(TYP) VGS=7V, ID=5A 50m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-2

Datasheet: MTD6N20ET4 , MTD6N20ET4G , MTD6P10E , MTDP9620Q8 , MTDP9933KQ8 , MTE05N10FP , MTE130N20J3 , MTE150P20H8 , 7N65 , MTE55N20J3 , MTE6D5N12B0E3 , MTE8D0N08H8 , MTG9N50E , MTH13N45 , MTH13N50 , MTH15N35 , IPU25CN10N .

History: MTNK6N3 | KU035N06P | IRLR8715CPBF | BUZ111S | FQB10N50CFTM | CS3N90A8 | IRF7530

Keywords - MTE55N10FP MOSFET datasheet

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