MTE55N10FP Specs and Replacement
Type Designator: MTE55N10FP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 76.3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
Package: TO-220FP
MTE55N10FP substitution
- MOSFET ⓘ Cross-Reference Search
MTE55N10FP datasheet
mte55n10fp.pdf
Spec. No. C959FP Issued Date 2014.11.25 CYStech Electronics Corp. Revised Date Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTE55N10FP ID 18A RDS(ON)@VGS=10V, ID=18A 55.4 m (typ) RDS(ON)@VGS=7V, ID=12A 56.1 m (typ) Description The MTE55N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switch... See More ⇒
mte55n20j3.pdf
Spec. No. C976J3 Issued Date 2014.09.17 CYStech Electronics Corp. Revised Date 2014.10.02 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200V MTE55N20J3 ID@VGS=10V 26A VGS=10V, ID=11A 48m RDSON(TYP) VGS=7V, ID=5A 50m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-2... See More ⇒
Detailed specifications: MTD6N20ET4, MTD6N20ET4G, MTD6P10E, MTDP9620Q8, MTDP9933KQ8, MTE05N10FP, MTE130N20J3, MTE150P20H8, IRF630, MTE55N20J3, MTE6D5N12B0E3, MTE8D0N08H8, MTG9N50E, MTH13N45, MTH13N50, MTH15N35, IPU25CN10N
Keywords - MTE55N10FP MOSFET specs
MTE55N10FP cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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