MTE55N20J3 PDF and Equivalents Search

 

MTE55N20J3 Specs and Replacement

Type Designator: MTE55N20J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 93.2 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO-252

MTE55N20J3 substitution

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MTE55N20J3 datasheet

 ..1. Size:366K  cystek
 mte55n20j3.pdf pdf_icon

MTE55N20J3

Spec. No. C976J3 Issued Date 2014.09.17 CYStech Electronics Corp. Revised Date 2014.10.02 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200V MTE55N20J3 ID@VGS=10V 26A VGS=10V, ID=11A 48m RDSON(TYP) VGS=7V, ID=5A 50m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-2... See More ⇒

 8.1. Size:350K  cystek
 mte55n10fp.pdf pdf_icon

MTE55N20J3

Spec. No. C959FP Issued Date 2014.11.25 CYStech Electronics Corp. Revised Date Page No. 1/ 8 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTE55N10FP ID 18A RDS(ON)@VGS=10V, ID=18A 55.4 m (typ) RDS(ON)@VGS=7V, ID=12A 56.1 m (typ) Description The MTE55N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switch... See More ⇒

Detailed specifications: MTD6N20ET4G, MTD6P10E, MTDP9620Q8, MTDP9933KQ8, MTE05N10FP, MTE130N20J3, MTE150P20H8, MTE55N10FP, IRF9540, MTE6D5N12B0E3, MTE8D0N08H8, MTG9N50E, MTH13N45, MTH13N50, MTH15N35, IPU25CN10N, IPB35CN10N

Keywords - MTE55N20J3 MOSFET specs

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