MTE6D5N12B0E3 Specs and Replacement
Type Designator: MTE6D5N12B0E3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 86 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 593 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
Package: TO-220
MTE6D5N12B0E3 substitution
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MTE6D5N12B0E3 datasheet
mte6d5n12b0e3.pdf
Spec. No. C935E3 Issued Date 2014.03.31 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 120V MTE6D5N12B0E3 ID @ VGS=10V 129A 7.9m RDSON(TYP) @ VGS=10V, ID=50A RDSON(TYP) @ VGS=7V, ID=20A 8.5m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Char... See More ⇒
Detailed specifications: MTD6P10E, MTDP9620Q8, MTDP9933KQ8, MTE05N10FP, MTE130N20J3, MTE150P20H8, MTE55N10FP, MTE55N20J3, AON7408, MTE8D0N08H8, MTG9N50E, MTH13N45, MTH13N50, MTH15N35, IPU25CN10N, IPB35CN10N, IPU33CN10N
Keywords - MTE6D5N12B0E3 MOSFET specs
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MTE6D5N12B0E3 replacement
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