All MOSFET. MTE6D5N12B0E3 Datasheet

 

MTE6D5N12B0E3 Datasheet and Replacement


   Type Designator: MTE6D5N12B0E3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 86 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 593 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
   Package: TO-220
 

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MTE6D5N12B0E3 Datasheet (PDF)

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MTE6D5N12B0E3

Spec. No. : C935E3 Issued Date : 2014.03.31 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 120VMTE6D5N12B0E3 ID @ VGS=10V 129A7.9m RDSON(TYP) @ VGS=10V, ID=50A RDSON(TYP) @ VGS=7V, ID=20A 8.5m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Char

Datasheet: MTD6P10E , MTDP9620Q8 , MTDP9933KQ8 , MTE05N10FP , MTE130N20J3 , MTE150P20H8 , MTE55N10FP , MTE55N20J3 , 2N7000 , MTE8D0N08H8 , MTG9N50E , MTH13N45 , MTH13N50 , MTH15N35 , IPU25CN10N , IPB35CN10N , IPU33CN10N .

History: ISZ019N03L5S | IRLML9303

Keywords - MTE6D5N12B0E3 MOSFET datasheet

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