MTE8D0N08H8 Specs and Replacement
Type Designator: MTE8D0N08H8
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13.2 nS
Cossⓘ - Output Capacitance: 286 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: DFN5X6
MTE8D0N08H8 substitution
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MTE8D0N08H8 datasheet
mte8d0n08h8.pdf
Spec. No. C991H8 Issued Date 2014.12.09 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 80V MTE8D0N08H8 ID@VGS=10V, TC=25 C 50A ID@VGS=10V, TC=100 C 32A ID@VGS=10V, TA=25 C 15A Features ID@VGS=10V, TA=70 C 12A RDS(ON)@VGS=10V, ID=30A 7.1 m (typ) Single Drive Requirement RDS(ON)@VGS=7V, ID=20A 7.9 m (... See More ⇒
Detailed specifications: MTDP9620Q8, MTDP9933KQ8, MTE05N10FP, MTE130N20J3, MTE150P20H8, MTE55N10FP, MTE55N20J3, MTE6D5N12B0E3, 2SK3878, MTG9N50E, MTH13N45, MTH13N50, MTH15N35, IPU25CN10N, IPB35CN10N, IPU33CN10N, IPB80CN10N
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