All MOSFET. MTE8D0N08H8 Datasheet

 

MTE8D0N08H8 Datasheet and Replacement


   Type Designator: MTE8D0N08H8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 286 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: DFN5X6
 

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MTE8D0N08H8 Datasheet (PDF)

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MTE8D0N08H8

Spec. No. : C991H8 Issued Date : 2014.12.09 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 80VMTE8D0N08H8ID@VGS=10V, TC=25C 50A ID@VGS=10V, TC=100C 32A ID@VGS=10V, TA=25C 15A Features ID@VGS=10V, TA=70C 12A RDS(ON)@VGS=10V, ID=30A 7.1 m(typ) Single Drive Requirement RDS(ON)@VGS=7V, ID=20A 7.9 m(

Datasheet: MTDP9620Q8 , MTDP9933KQ8 , MTE05N10FP , MTE130N20J3 , MTE150P20H8 , MTE55N10FP , MTE55N20J3 , MTE6D5N12B0E3 , IRFP260 , MTG9N50E , MTH13N45 , MTH13N50 , MTH15N35 , IPU25CN10N , IPB35CN10N , IPU33CN10N , IPB80CN10N .

History: WST2026

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