All MOSFET. IPU78CN10N Datasheet

 

IPU78CN10N Datasheet and Replacement


   Type Designator: IPU78CN10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: TO251
 

 IPU78CN10N substitution

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IPU78CN10N Datasheet (PDF)

 ..1. Size:705K  infineon
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IPU78CN10N

IPB80CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G IPU78CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 78mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 13 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

Datasheet: MTG9N50E , MTH13N45 , MTH13N50 , MTH15N35 , IPU25CN10N , IPB35CN10N , IPU33CN10N , IPB80CN10N , 2SK3568 , MTH15N40 , MTH20N15 , MTH5N100 , MTH5N95 , MTH6N100 , MTH6N100E , MTH6N55 , MTH6N60 .

History: WVM3N10 | HPW080NE5SPA | NP90N04VDG | KSK596 | FQAF33N10 | WTM3401 | AON6790

Keywords - IPU78CN10N MOSFET datasheet

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