All MOSFET. IPU78CN10N Datasheet

 

IPU78CN10N MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPU78CN10N
   Marking Code: 78CN10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: TO251

 IPU78CN10N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPU78CN10N Datasheet (PDF)

 ..1. Size:705K  infineon
 ipb80cn10n ipd78cn10n ipi80cn10n ipp80cn10n ipu78cn10n.pdf

IPU78CN10N IPU78CN10N

IPB80CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G IPU78CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 78mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 13 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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