MTH8N60 Specs and Replacement
Type Designator: MTH8N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 160 nS
Cossⓘ - Output Capacitance: 425 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-218
MTH8N60 substitution
- MOSFET ⓘ Cross-Reference Search
MTH8N60 datasheet
Detailed specifications: MTH5N95, MTH6N100, MTH6N100E, MTH6N55, MTH6N60, MTH8N35, MTH8N40, MTH8N55, CS150N03A8, MTH8N90, MTM10N100E, MTM10N25, MTM12N10, MTM12P05, MTM12P06, MTM12P08, MTM12P10
Keywords - MTH8N60 MOSFET specs
MTH8N60 cross reference
MTH8N60 equivalent finder
MTH8N60 pdf lookup
MTH8N60 substitution
MTH8N60 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AGM215TS | AGM20P30AP1
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