MTM26N40E Datasheet and Replacement
Type Designator: MTM26N40E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-204
MTM26N40E substitution
MTM26N40E Datasheet (PDF)
mtm26n40e.pdf

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM26N40(MTM26N40E) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of pow
Datasheet: MTM23123 , MTM23223 , MTM232230LBF , MTM23227 , MTM232270LBF , MTM24N45E , MTM24N50 , MTM25N10 , IRFZ48N , MTM2N50 , MTM2N85 , MTM2N90 , MTM30N50 , MTM3N60 , MTM40N20 , MTM45N15 , MTM4N45 .
History: NCEP0210Q | 2SK3883-01 | MTM5N95 | GSM3411 | 2SK4066-E | 2SK3755 | FDMD85100
Keywords - MTM26N40E MOSFET datasheet
MTM26N40E cross reference
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History: NCEP0210Q | 2SK3883-01 | MTM5N95 | GSM3411 | 2SK4066-E | 2SK3755 | FDMD85100



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