MTM6N90 Datasheet and Replacement
Type Designator: MTM6N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-204
MTM6N90 substitution
MTM6N90 Datasheet (PDF)
mtm6n90.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM6N90(MTM6N90) Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power
Datasheet: MTM5N35 , MTM5N40 , MTM5N95 , MTM60N05 , MTM60N06 , MTM68410 , MTM68411 , MTM6N60 , IRF3205 , MTM76110 , MTM76111 , MTM76123 , MTM76320 , MTM76325 , MTM76420 , MTM76520 , MTM78E2B .
History: BRCS250N03DSC | IXFT23N80Q | 14N50G-TF1-T | CEK7002A | CEN2321A | 14N50L-TA3-T | BRCS120P012MC
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History: BRCS250N03DSC | IXFT23N80Q | 14N50G-TF1-T | CEK7002A | CEN2321A | 14N50L-TA3-T | BRCS120P012MC
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