All MOSFET. MTM78E2B0LBF Datasheet

 

MTM78E2B0LBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTM78E2B0LBF
   Marking Code: 5A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 500 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: WSMINI8-F1-B

 MTM78E2B0LBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTM78E2B0LBF Datasheet (PDF)

 ..1. Size:355K  panasonic
 mtm78e2b0lbf.pdf

MTM78E2B0LBF MTM78E2B0LBF

Doc No. TT4-EA-12408Revision. 2Product StandardsMOS FETMTM78E2B0LBFMTM78E2B0LBFGate Resistor installed Dual N-Channel MOS TypeUnit: mm 2.0For lithium-ion secondary battery protection circuit0.2 0.138 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ. = 21.5 m (VGS =4.0 V) Halogen-free / RoHS compliant1 2 3 4 (EU RoHS / UL-94 V-0 / MSL

 6.1. Size:517K  panasonic
 mtm78e2b.pdf

MTM78E2B0LBF MTM78E2B0LBF

This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOS FETs (Small Signal) MTM78E2BDual N-channel MOS FETFor lithium-ion secondary battery protection circuit Overview PackageMTM78E2B is the MOS FET which is suitable for lithium ion secondary Codebattery protection circuit and features low on-resistance by the leading-edge fine WSMini8-F1-Bprocess a

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