MTM78E2B0LBF MOSFET Datasheet: N-Ch, 20V, 4A. Full specification with pinout and replacement list

MTM78E2B0LBF Specs and Replacement

Type Designator: MTM78E2B0LBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 500 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: WSMINI8-F1-B

MTM78E2B0LBF substitution

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MTM78E2B0LBF datasheet

..1. Size:355K panasonic
mtm78e2b0lbf.pdf pdf_icon

Doc No. TT4-EA-12408 Revision. 2 Product Standards MOS FET MTM78E2B0LBF MTM78E2B0LBF Gate Resistor installed Dual N-Channel MOS Type Unit mm 2.0 For lithium-ion secondary battery protection circuit 0.2 0.13 8 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ. = 21.5 m (VGS =4.0 V) Halogen-free / RoHS compliant 1 2 3 4 (EU RoHS / UL-94 V-0 / MSL... See More ⇒

6.1. Size:517K panasonic
mtm78e2b.pdf pdf_icon

This product complies with the RoHS Directive (EU 2002/95/EC). Silicon MOS FETs (Small Signal) MTM78E2B Dual N-channel MOS FET For lithium-ion secondary battery protection circuit Overview Package MTM78E2B is the MOS FET which is suitable for lithium ion secondary Code battery protection circuit and features low on-resistance by the leading-edge fine WSMini8-F1-B process a... See More ⇒

Detailed specifications: MTM76110, MTM76111, MTM76123, MTM76320, MTM76325, MTM76420, MTM76520, MTM78E2B, IRF640, MTM7N45, MTM7N50, MTM86124, MTM86127, MTM86128, MTM86227, MTM8N20, MTM8N35