MTMC8E2A Datasheet and Replacement
Type Designator: MTMC8E2A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 700 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: WMINI8-F1
MTMC8E2A substitution
MTMC8E2A Datasheet (PDF)
mtmc8e2a.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).MTMC8E2ASilicon N-channel MOS FETFor lithium-ion secondary battery protection circuit Overview PackageThe MTMC8E2A is the low ON resistance dual N-channel MOS FET Codedesigned for lithium-ion secondary battery protection circuit. WMini8-F1Package dimension clicks here. Click! Features Low drain-
mtmc8e2a0lbf.pdf

Doc No. TT4-EA-12100Revision. 2Product StandardsMOS FETMTMC8E2A0LBFMTMC8E2A0LBFGate Resistor installed Dual N-Channel MOS TypUnit: mm 2.9For lithium-ion secondary battery protection circuit0.3 0.168 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ. = 15 m (VGS =4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 com
Datasheet: MTM8N20 , MTM8N35 , MTM8N40 , MTM8N60 , MTM98140 , MTM981400BBF , MTM98240 , MTM982400BBF , STP75NF75 , MTN12N30FP , MTN12N60BFP , MTN1N60L3 , MTN2300AN3 , MTN4N65F3 , MTN8N65FI , MTN9N50FP , MTP10N08 .
History: TK10Q60W | WMO120N04TS
Keywords - MTMC8E2A MOSFET datasheet
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History: TK10Q60W | WMO120N04TS



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