All MOSFET. MTMC8E2A Datasheet

 

MTMC8E2A MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTMC8E2A
   Marking Code: 4B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 700 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: WMINI8-F1

 MTMC8E2A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTMC8E2A Datasheet (PDF)

 ..1. Size:434K  panasonic
 mtmc8e2a.pdf

MTMC8E2A MTMC8E2A

This product complies with the RoHS Directive (EU 2002/95/EC).MTMC8E2ASilicon N-channel MOS FETFor lithium-ion secondary battery protection circuit Overview PackageThe MTMC8E2A is the low ON resistance dual N-channel MOS FET Codedesigned for lithium-ion secondary battery protection circuit. WMini8-F1Package dimension clicks here. Click! Features Low drain-

 0.1. Size:279K  panasonic
 mtmc8e2a0lbf.pdf

MTMC8E2A MTMC8E2A

Doc No. TT4-EA-12100Revision. 2Product StandardsMOS FETMTMC8E2A0LBFMTMC8E2A0LBFGate Resistor installed Dual N-Channel MOS TypUnit: mm 2.9For lithium-ion secondary battery protection circuit0.3 0.168 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ. = 15 m (VGS =4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 com

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: APM7318KC | DMN3030LSS | JCS10N65ST

 

 
Back to Top