All MOSFET. MTN8N65FI Datasheet

 

MTN8N65FI MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTN8N65FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 165 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
   Package: TO-262

 MTN8N65FI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTN8N65FI Datasheet (PDF)

 ..1. Size:326K  cystek
mtn8n65fi.pdf

MTN8N65FI MTN8N65FI

Spec. No. : C727FI Issued Date : 2012.09.26 CYStech Electronics Corp.Revised Date : 2015.03.16 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS 650VMTN8N65FI ID @ VGS=10V, TC=25C 7.5A 1.2 RDSON(TYP) @ VGS=10V, ID=3.75A Description The MTN8N65FI is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, r

 6.1. Size:364K  cystek
mtn8n65fp.pdf

MTN8N65FI MTN8N65FI

Spec. No. : C727FP Issued Date : 2009.06.23 CYStech Electronics Corp.Revised Date : 2012.10.08 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) :1.2(typ.) MTN8N65FP ID : 7.5A Description The MTN8N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 7.1. Size:250K  cystek
mtn8n65ea.pdf

MTN8N65FI MTN8N65FI

Spec. No. : C727EA Issued Date : 2010.12.22 CYStech Electronics Corp.Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) :1.1(typ.) MTN8N65EA ID : 7.5A Description The MTN8N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 7.2. Size:237K  cystek
mtn8n65e3.pdf

MTN8N65FI MTN8N65FI

Spec. No. : C727E3 Issued Date : 2010.08.09 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 1.2(typ.) MTN8N65E3 ID : 7.5A Description The MTN8N65E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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