All MOSFET. RFH10N50 Datasheet

 

RFH10N50 Datasheet and Replacement


   Type Designator: RFH10N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO218AC
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RFH10N50 Datasheet (PDF)

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 rfh10n45 rfh10n50.pdf pdf_icon

RFH10N50

RFH10N45, RFH10N50SemiconductorData Sheet October 1998 File Number 1629.210A, 450V and 500V, 0.600 Ohm, FeaturesN-Channel Power MOSFETs 10A, 450V and 500V[ /TitleThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.600(RFH10power field effect transistors designed for applications such Related Literatureas switching regulators, switching converters, m

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700

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