RFH10N50 PDF and Equivalents Search

 

RFH10N50 Specs and Replacement

Type Designator: RFH10N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO218AC

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RFH10N50 datasheet

 ..1. Size:32K  harris semi
 rfh10n45 rfh10n50.pdf pdf_icon

RFH10N50

RFH10N45, RFH10N50 Semiconductor Data Sheet October 1998 File Number 1629.2 10A, 450V and 500V, 0.600 Ohm, Features N-Channel Power MOSFETs 10A, 450V and 500V [ /Title These are N-Channel enhancement mode silicon gate rDS(ON) = 0.600 (RFH10 power field effect transistors designed for applications such Related Literature as switching regulators, switching converters, m... See More ⇒

Detailed specifications: MTP10N10E, MTP10N10ELG, MTP10N25, MTP10N35, MTP10N40, MTP10N40E, MTP12N08L, RFH10N45, 13N50, SMD15N05, SMU15N05, MTP12N10E, MTP12N10L, MTP12N18, MTP12N20, MTP12P05, MTP12P06

Keywords - RFH10N50 MOSFET specs

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