MTP15N05 Datasheet and Replacement
Type Designator: MTP15N05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO-220AB
MTP15N05 substitution
MTP15N05 Datasheet (PDF)
mtp15n06vl.pdf
MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTP15N06VL/DDesigner's Data SheetMTP15N06VLTMOS VPower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET TMOS V is a new technology designed to achieve an onresis-15 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more tha
Datasheet: MTP12N10L , MTP12N18 , MTP12N20 , MTP12P05 , MTP12P06 , MTP12P08 , MTP12P10 , MTP12P10G , IRF1407 , MTP15N05E , MTP15N06 , MTP1N100 , MTP1N50 , MTP1N50E , MTP1N55 , MTP1N60 , MTP1N60E .
History: IPF13N03LAG | APM4927K | G08N03D2 | BUZ231 | IPI60R190C6 | TPC8104 | VN67AK
Keywords - MTP15N05 MOSFET datasheet
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History: IPF13N03LAG | APM4927K | G08N03D2 | BUZ231 | IPI60R190C6 | TPC8104 | VN67AK
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