All MOSFET. MTP2N18 Datasheet

 

MTP2N18 Datasheet and Replacement


   Type Designator: MTP2N18
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 180 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 3.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.5 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO-220AB
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MTP2N18 Datasheet (PDF)

 ..1. Size:107K  1
 irf610 irf611 irf612 irf613 mtp2n18 mtp2n20.pdf pdf_icon

MTP2N18

 ..2. Size:107K  njs
 mtp2n18 mtp2n20.pdf pdf_icon

MTP2N18

 9.1. Size:217K  motorola
 mtp2n40erev0bx.pdf pdf_icon

MTP2N18

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N40E/DDesigner's Data SheetMTP2N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra

 9.2. Size:244K  motorola
 mtp2n50e.pdf pdf_icon

MTP2N18

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N50E/DDesigner's Data SheetMTP2N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

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Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

Keywords - MTP2N18 MOSFET datasheet

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