MTP2N18 Specs and Replacement
Type Designator: MTP2N18
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 180 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO-220AB
MTP2N18 substitution
- MOSFET ⓘ Cross-Reference Search
MTP2N18 datasheet
mtp2n40erev0bx.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N40E/D Designer's Data Sheet MTP2N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 400 VOLTS degra... See More ⇒
mtp2n50e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N50E/D Designer's Data Sheet MTP2N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra... See More ⇒
Detailed specifications: MTP20N15EG, MTP20N20E, MTP20P06, MTP23P06V, MTP23P06VG, MTP25N05E, MTP2955, MTP2955V, 8N60, MTP2N20, MTP2N35, MTP2N40, MTP2N40E, MTP2N45, MTP2N50E, MTP2N55, MTP2N60
Keywords - MTP2N18 MOSFET specs
MTP2N18 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2N65KL-TND-R | MEM2307XG | AS2003M | H05N60F | SFS08R07GF | ME35N10-G | AGM40P100A
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