MTP2N60 MOSFET. Datasheet pdf. Equivalent

   Type Designator: MTP2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO-220AB

MTP2N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MTP2N60 Datasheet (PDF)

..1. Size:56K motorola
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0.1. Size:190K motorola
mtp2n60e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N60E/DDesigner's Data SheetMTP2N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra

0.2. Size:219K motorola
mtp2n60erev2a.pdf