MTP2N60 MOSFET Datasheet: N-Ch, 600V, 2A. Full specification with pinout and replacement list

MTP2N60 Specs and Replacement

Type Designator: MTP2N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Id| ⓘ - Maximum Drain Current: 2 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm

Package: TO-220AB

MTP2N60 substitution

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MTP2N60 datasheet

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N60E/D Designer's Data Sheet MTP2N60E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 600 VOLTS degra... See More ⇒

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