MTP4N10 Datasheet. Specs and Replacement

Type Designator: MTP4N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-220AB

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MTP4N10 datasheet

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Detailed specifications: MTP3N35, MTP3N40, MTP3N55, MTP3N75, MTP3N80, MTP3N95, MTP3P25, MTP4N08, 20N60, MTP4N40E, MTP4N45, MTP4N50, MTP4N60, MTP4N80E, MTP4N85, MTP4N90, MTP50N06V

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