MTP4N40E Spec and Replacement
Type Designator: MTP4N40E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 72 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO-220AB
MTP4N40E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP4N40E Specs
mtp4n40e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N40E/D Designer's Data Sheet MTP4N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES scheme to provide enhanced voltage blocking capability without 400 VOLTS degra... See More ⇒
mtp4n40erev2.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N40E/D Designer's Data Sheet MTP4N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES scheme to provide enhanced voltage blocking capability without 400 VOLTS degra... See More ⇒
mtp4n50erev1a.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N50E/D Designer's Data Sheet MTP4N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 4.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new ... See More ⇒
Detailed specifications: MTP3N40 , MTP3N55 , MTP3N75 , MTP3N80 , MTP3N95 , MTP3P25 , MTP4N08 , MTP4N10 , IRF540N , MTP4N45 , MTP4N50 , MTP4N60 , MTP4N80E , MTP4N85 , MTP4N90 , MTP50N06V , MTP50P03HDLG .
History: TF3404
Keywords - MTP4N40E MOSFET specs
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History: TF3404
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