MTP5N05 Datasheet. Specs and Replacement

Type Designator: MTP5N05  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-220AB

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MTP5N05 datasheet

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP5N40E/D Designer's Data Sheet MTP5N40E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 5.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new ... See More ⇒

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP5N40E/D Designer's Data Sheet MTP5N40E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 5.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new ... See More ⇒

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Detailed specifications: MTP4N45, MTP4N50, MTP4N60, MTP4N80E, MTP4N85, MTP4N90, MTP50N06V, MTP50P03HDLG, IRFP260N, MTP5N06, MTP5N35, MTP5N40, MTP5N40E, MTP5N60, MTP5P18, MTP5P20, MTP5P25

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