MTP5N05 Spec and Replacement
Type Designator: MTP5N05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-220AB
MTP5N05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP5N05 Specs
mtp5n40e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP5N40E/D Designer's Data Sheet MTP5N40E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 5.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new ... See More ⇒
mtp5n40erev1a.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP5N40E/D Designer's Data Sheet MTP5N40E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 5.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 400 VOLTS This new ... See More ⇒
Detailed specifications: MTP4N45 , MTP4N50 , MTP4N60 , MTP4N80E , MTP4N85 , MTP4N90 , MTP50N06V , MTP50P03HDLG , IRF640N , MTP5N06 , MTP5N35 , MTP5N40 , MTP5N40E , MTP5N60 , MTP5P18 , MTP5P20 , MTP5P25 .
History: PTD3006
Keywords - MTP5N05 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: PTD3006
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