MTP5N60 MOSFET. Datasheet pdf. Equivalent

   Type Designator: MTP5N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220C

MTP5N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MTP5N60 Datasheet (PDF)

..1. Size:56K njs
mtp5n60.pdf

9.1. Size:171K motorola
mtp5n40e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP5N40E/DDesigner's Data SheetMTP5N40ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to5.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.400 VOLTSThis new

9.2. Size:258K motorola
mtp5n40erev1a.pdf