MTP6N60E MOSFET. Datasheet pdf. Equivalent
Type Designator: MTP6N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 35.5 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 158 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-220AB
MTP6N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP6N60E Datasheet (PDF)
mtp6n60e.pdf
TMOS E-FET.MTP6N60EPower Field Effect TransistorON Semiconductor Preferred DeviceNChannel EnhancementMode Silicon GateThis high voltage MOSFET uses an advanced termination schemeTMOS POWER FETto provide enhanced voltageblocking capability without degrading6.0 AMPERESperformance over time. In addition, this advanced TMOS EFET is600 VOLTSdesigned to withstand
mtp6n60erev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP6N60E/DDesigner's Data SheetMTP6N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination6.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra
mtp6n60.pdf
MTP6N60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP6N60 600 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
