MTP6N60E MOSFET Datasheet: N-Ch, 600V, 6A. Full specification with pinout and replacement list

MTP6N60E Specs and Replacement

Type Designator: MTP6N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 158 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220AB

MTP6N60E substitution

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MTP6N60E datasheet

..1. Size:28K motorola
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TMOS E-FET. MTP6N60E Power Field Effect Transistor ON Semiconductor Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme TMOS POWER FET to provide enhanced voltage blocking capability without degrading 6.0 AMPERES performance over time. In addition, this advanced TMOS E FET is 600 VOLTS designed to withstand ... See More ⇒

0.1. Size:156K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP6N60E/D Designer's Data Sheet MTP6N60E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 6.0 AMPERES scheme to provide enhanced voltage blocking capability without 600 VOLTS degra... See More ⇒

7.1. Size:153K st
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