MTP6P20E MOSFET. Datasheet pdf. Equivalent
Type Designator: MTP6P20E
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 128 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220AB
MTP6P20E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP6P20E Datasheet (PDF)
mtp6p20e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP6P20E/DDesigner's Data SheetMTP6P20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high6.0 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffic
mtp6p20e.pdf
MTP6P20EPreferred DevicePower MOSFET6 Amps, 200 VoltsPChannel TO220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a draintosource diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,6 AMPERESconverters
mtp6p20erev0x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP6P20E/DDesigner's Data SheetMTP6P20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high6.0 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffic
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
