All MOSFET. MTP6P20E Datasheet

 

MTP6P20E Datasheet and Replacement


   Type Designator: MTP6P20E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 128 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220AB
 

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MTP6P20E Datasheet (PDF)

 ..1. Size:186K  motorola
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MTP6P20E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP6P20E/DDesigner's Data SheetMTP6P20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high6.0 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffic

 ..2. Size:96K  onsemi
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MTP6P20E

MTP6P20EPreferred DevicePower MOSFET6 Amps, 200 VoltsPChannel TO220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a draintosource diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,6 AMPERESconverters

 0.1. Size:216K  motorola
 mtp6p20erev0x.pdf pdf_icon

MTP6P20E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP6P20E/DDesigner's Data SheetMTP6P20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high6.0 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffic

Datasheet: MTP5N35 , MTP5N40 , MTP5N40E , MTP5N60 , MTP5P18 , MTP5P20 , MTP5P25 , MTP6N60E , 2SK3878 , MTP7N18 , MTP7N20 , MTP7N60 , MTP7P05 , MTP7P06 , MTP8N20 , MTP8N50E , MTP8N60 .

History: F5020-S | SPU07N60C3

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