MTP6P20E MOSFET Datasheet: P-Ch, 200V, 6A. Full specification with pinout and replacement list

MTP6P20E Specs and Replacement

Type Designator: MTP6P20E

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 128 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220AB

MTP6P20E substitution

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MTP6P20E datasheet

..1. Size:186K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP6P20E/D Designer's Data Sheet MTP6P20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 6.0 AMPERES energy in the avalanche and commutation modes. The new energy 200 VOLTS effic... See More ⇒

..2. Size:96K onsemi
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MTP6P20E Preferred Device Power MOSFET 6 Amps, 200 Volts P Channel TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, 6 AMPERES converters ... See More ⇒

0.1. Size:216K motorola
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