MTW10N100E Datasheet and Replacement
Type Designator: MTW10N100E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 264 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO-247AE
MTW10N100E substitution
MTW10N100E Datasheet (PDF)
mtw10n100e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW10N100E/DDesigner's Data SheetMTW10N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 10 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.3 OHMscheme to pro
mtw10n100erev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW10N100E/DDesigner's Data SheetMTW10N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 10 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.3 OHMscheme to pro
Datasheet: MTP7P05 , MTP7P06 , MTP8N20 , MTP8N50E , MTP8N60 , MTP8P08 , MTP8P10 , MTP8P25 , IRFP260 , MTW10N40E , MTW14N50E , MTW16N40E , MTW20N50E , MTW23N25E , MTW24N40E , MTW26N15E , MTW32N20EG .
History: HM4487A | UT4392 | IRL520NPBF | AMA421P | SVF12N65CKL | TPCP8001-H | SIS412DN
Keywords - MTW10N100E MOSFET datasheet
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History: HM4487A | UT4392 | IRL520NPBF | AMA421P | SVF12N65CKL | TPCP8001-H | SIS412DN
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