All MOSFET. MTW10N100E Datasheet

 

MTW10N100E Datasheet and Replacement


   Type Designator: MTW10N100E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 264 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-247AE
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MTW10N100E Datasheet (PDF)

 ..1. Size:121K  motorola
 mtw10n100e.pdf pdf_icon

MTW10N100E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW10N100E/DDesigner's Data SheetMTW10N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 10 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.3 OHMscheme to pro

 0.1. Size:192K  motorola
 mtw10n100erev3.pdf pdf_icon

MTW10N100E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW10N100E/DDesigner's Data SheetMTW10N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 10 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.3 OHMscheme to pro

 8.1. Size:74K  motorola
 mtw10n40e.pdf pdf_icon

MTW10N100E

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK1712 | P085AATX | BRFL12N65 | BUK473-100A | PCJ3139K | AP9579GM | SVG108R5NAT

Keywords - MTW10N100E MOSFET datasheet

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