All MOSFET. MTW16N40E Datasheet

 

MTW16N40E Datasheet and Replacement


   Type Designator: MTW16N40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-247AE
 

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MTW16N40E Datasheet (PDF)

 ..1. Size:145K  motorola
 mtw16n40e.pdf pdf_icon

MTW16N40E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW16N40E/DDesigner's Data SheetMTW16N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 16 AMPERES400 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 0.24 OHMscheme to provi

 0.1. Size:217K  motorola
 mtw16n40erev3.pdf pdf_icon

MTW16N40E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW16N40E/DDesigner's Data SheetMTW16N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 16 AMPERES400 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 0.24 OHMscheme to provi

Datasheet: MTP8N50E , MTP8N60 , MTP8P08 , MTP8P10 , MTP8P25 , MTW10N100E , MTW10N40E , MTW14N50E , AON7410 , MTW20N50E , MTW23N25E , MTW24N40E , MTW26N15E , MTW32N20EG , MTW32N25E , MTW33N10E , MTW35N15E .

History: AOW418 | OSG60R108FZF | R6020KNX | UTM6016L-TN3-R | AOW410 | PHD98N03LT | AON6594

Keywords - MTW16N40E MOSFET datasheet

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