MTW16N40E PDF and Equivalents Search

 

MTW16N40E Specs and Replacement

Type Designator: MTW16N40E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO-247AE

MTW16N40E substitution

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MTW16N40E datasheet

 ..1. Size:145K  motorola
 mtw16n40e.pdf pdf_icon

MTW16N40E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW16N40E/D Designer's Data Sheet MTW16N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 16 AMPERES 400 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.24 OHM scheme to provi... See More ⇒

 0.1. Size:217K  motorola
 mtw16n40erev3.pdf pdf_icon

MTW16N40E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW16N40E/D Designer's Data Sheet MTW16N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 16 AMPERES 400 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.24 OHM scheme to provi... See More ⇒

Detailed specifications: MTP8N50E, MTP8N60, MTP8P08, MTP8P10, MTP8P25, MTW10N100E, MTW10N40E, MTW14N50E, 4435, MTW20N50E, MTW23N25E, MTW24N40E, MTW26N15E, MTW32N20EG, MTW32N25E, MTW33N10E, MTW35N15E

Keywords - MTW16N40E MOSFET specs

 MTW16N40E cross reference

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 MTW16N40E replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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