All MOSFET. MTW23N25E Datasheet

 

MTW23N25E Datasheet and Replacement


   Type Designator: MTW23N25E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO-247AE
 

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MTW23N25E Datasheet (PDF)

 ..1. Size:95K  motorola
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MTW23N25E

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTW23N25E/DDesigner's Data SheetMTW23N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 23 AMPERES 250 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.11 OHMenergy in

 0.1. Size:152K  motorola
 mtw23n25erev2.pdf pdf_icon

MTW23N25E

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTW23N25E/DDesigner's Data SheetMTW23N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 23 AMPERES 250 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.11 OHMenergy in

Datasheet: MTP8P08 , MTP8P10 , MTP8P25 , MTW10N100E , MTW10N40E , MTW14N50E , MTW16N40E , MTW20N50E , IRF9540N , MTW24N40E , MTW26N15E , MTW32N20EG , MTW32N25E , MTW33N10E , MTW35N15E , MTW45N10E , MTW4N80E .

History: P1065ETF | BSC252N10NSF | RW1E015RP | SVG15670NSA | IXFN340N06 | IRF7665S2TRPBF | AOB66613L

Keywords - MTW23N25E MOSFET datasheet

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