MTW23N25E MOSFET Datasheet: N-Ch, 250V, 23A. Full specification with pinout and replacement list

MTW23N25E Specs and Replacement

Type Designator: MTW23N25E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO-247AE

MTW23N25E substitution

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MTW23N25E datasheet

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW23N25E/D Designer's Data Sheet MTW23N25E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 23 AMPERES 250 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.11 OHM energy in ... See More ⇒

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