MTW24N40E PDF and Equivalents Search

 

MTW24N40E Specs and Replacement

Type Designator: MTW24N40E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 96 nS

Cossⓘ - Output Capacitance: 530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO-247AE

MTW24N40E substitution

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MTW24N40E datasheet

 ..1. Size:109K  motorola
 mtw24n40e.pdf pdf_icon

MTW24N40E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW24N40E/D Designer's Data Sheet MTW24N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 24 AMPERES 400 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.16 OHM scheme to provi... See More ⇒

 0.1. Size:174K  motorola
 mtw24n40erev4.pdf pdf_icon

MTW24N40E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW24N40E/D Designer's Data Sheet MTW24N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 24 AMPERES 400 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.16 OHM scheme to provi... See More ⇒

Detailed specifications: MTP8P10, MTP8P25, MTW10N100E, MTW10N40E, MTW14N50E, MTW16N40E, MTW20N50E, MTW23N25E, K4145, MTW26N15E, MTW32N20EG, MTW32N25E, MTW33N10E, MTW35N15E, MTW45N10E, MTW4N80E, MTW6N60E

Keywords - MTW24N40E MOSFET specs

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