All MOSFET. MTW24N40E Datasheet

 

MTW24N40E Datasheet and Replacement


   Type Designator: MTW24N40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 96 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO-247AE
 

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MTW24N40E Datasheet (PDF)

 ..1. Size:109K  motorola
 mtw24n40e.pdf pdf_icon

MTW24N40E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW24N40E/DDesigner's Data SheetMTW24N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 24 AMPERES400 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 0.16 OHMscheme to provi

 0.1. Size:174K  motorola
 mtw24n40erev4.pdf pdf_icon

MTW24N40E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW24N40E/DDesigner's Data SheetMTW24N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 24 AMPERES400 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 0.16 OHMscheme to provi

Datasheet: MTP8P10 , MTP8P25 , MTW10N100E , MTW10N40E , MTW14N50E , MTW16N40E , MTW20N50E , MTW23N25E , IRFB3607 , MTW26N15E , MTW32N20EG , MTW32N25E , MTW33N10E , MTW35N15E , MTW45N10E , MTW4N80E , MTW6N60E .

History: TPCF8304 | FQI9N25CTU | GP2M005A050XG | APT7F120B | 2SK3575 | S60N18R | IPW65R280C6

Keywords - MTW24N40E MOSFET datasheet

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