All MOSFET. MTW26N15E Datasheet

 

MTW26N15E Datasheet and Replacement


   Type Designator: MTW26N15E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 116 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO-247AE
 

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MTW26N15E Datasheet (PDF)

 ..1. Size:105K  motorola
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MTW26N15E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW26N15E/DDesigner's Data SheetMTW26N15ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 26 AMPERES 150 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.095 OHMenergy in

 0.1. Size:160K  motorola
 mtw26n15erev2.pdf pdf_icon

MTW26N15E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW26N15E/DDesigner's Data SheetMTW26N15ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 26 AMPERES 150 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.095 OHMenergy in

Datasheet: MTP8P25 , MTW10N100E , MTW10N40E , MTW14N50E , MTW16N40E , MTW20N50E , MTW23N25E , MTW24N40E , TK10A60D , MTW32N20EG , MTW32N25E , MTW33N10E , MTW35N15E , MTW45N10E , MTW4N80E , MTW6N60E , MTW7N80E .

History: FHP4N65A | TSM2N70CH | IPD025N06N | SSF2610E | TF3414 | TPCA8027-H | 2SK2313

Keywords - MTW26N15E MOSFET datasheet

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