MTW26N15E Specs and Replacement
Type Designator: MTW26N15E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 116 nS
Cossⓘ - Output Capacitance: 450 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO-247AE
MTW26N15E substitution
- MOSFET ⓘ Cross-Reference Search
MTW26N15E datasheet
mtw26n15e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW26N15E/D Designer's Data Sheet MTW26N15E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 26 AMPERES 150 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.095 OHM energy in ... See More ⇒
mtw26n15erev2.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW26N15E/D Designer's Data Sheet MTW26N15E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 26 AMPERES 150 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.095 OHM energy in ... See More ⇒
Detailed specifications: MTP8P25, MTW10N100E, MTW10N40E, MTW14N50E, MTW16N40E, MTW20N50E, MTW23N25E, MTW24N40E, 13N50, MTW32N20EG, MTW32N25E, MTW33N10E, MTW35N15E, MTW45N10E, MTW4N80E, MTW6N60E, MTW7N80E
Keywords - MTW26N15E MOSFET specs
MTW26N15E cross reference
MTW26N15E equivalent finder
MTW26N15E pdf lookup
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MTW26N15E replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: STU20L01A
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