All MOSFET. MTW33N10E Datasheet

 

MTW33N10E Datasheet and Replacement


   Type Designator: MTW33N10E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 164 nS
   Cossⓘ - Output Capacitance: 678 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-247AE
 

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MTW33N10E Datasheet (PDF)

 ..1. Size:145K  motorola
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MTW33N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW33N10E/DDesigner's Data SheetTMOS E FET.MTW33N10EPower Field Effect TransistorMotorola Preferred DeviceTO 247 with Isolated Mounting HoleN-Channel Enhancement-Mode Silicon GateTMOS POWER FETThis advanced TMOS E-FET is designed to withstand high33 AMPERESenergy in the avalanche and commutation modes. T

 0.1. Size:227K  motorola
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MTW33N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW33N10E/DDesigner's Data SheetTMOS E FET.MTW33N10EPower Field Effect TransistorMotorola Preferred DeviceTO 247 with Isolated Mounting HoleN-Channel Enhancement-Mode Silicon GateTMOS POWER FETThis advanced TMOS E-FET is designed to withstand high33 AMPERESenergy in the avalanche and commutation modes. T

Datasheet: MTW14N50E , MTW16N40E , MTW20N50E , MTW23N25E , MTW24N40E , MTW26N15E , MTW32N20EG , MTW32N25E , 4435 , MTW35N15E , MTW45N10E , MTW4N80E , MTW6N60E , MTW7N80E , MTW8N50E , MTY100N10E , MVB50P03HDL .

History: MTP5N40E | PD601CX

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