All MOSFET. MTW33N10E Datasheet

 

MTW33N10E Datasheet and Replacement


   Type Designator: MTW33N10E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 52 nC
   trⓘ - Rise Time: 164 nS
   Cossⓘ - Output Capacitance: 678 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-247AE
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MTW33N10E Datasheet (PDF)

 ..1. Size:145K  motorola
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MTW33N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW33N10E/DDesigner's Data SheetTMOS E FET.MTW33N10EPower Field Effect TransistorMotorola Preferred DeviceTO 247 with Isolated Mounting HoleN-Channel Enhancement-Mode Silicon GateTMOS POWER FETThis advanced TMOS E-FET is designed to withstand high33 AMPERESenergy in the avalanche and commutation modes. T

 0.1. Size:227K  motorola
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MTW33N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW33N10E/DDesigner's Data SheetTMOS E FET.MTW33N10EPower Field Effect TransistorMotorola Preferred DeviceTO 247 with Isolated Mounting HoleN-Channel Enhancement-Mode Silicon GateTMOS POWER FETThis advanced TMOS E-FET is designed to withstand high33 AMPERESenergy in the avalanche and commutation modes. T

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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