MTW33N10E PDF and Equivalents Search

 

MTW33N10E Specs and Replacement

Type Designator: MTW33N10E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 164 nS

Cossⓘ - Output Capacitance: 678 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO-247AE

MTW33N10E substitution

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MTW33N10E datasheet

 ..1. Size:145K  motorola
 mtw33n10e.pdf pdf_icon

MTW33N10E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW33N10E/D Designer's Data Sheet TMOS E FET. MTW33N10E Power Field Effect Transistor Motorola Preferred Device TO 247 with Isolated Mounting Hole N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET This advanced TMOS E-FET is designed to withstand high 33 AMPERES energy in the avalanche and commutation modes. T... See More ⇒

 0.1. Size:227K  motorola
 mtw33n10erev0.pdf pdf_icon

MTW33N10E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW33N10E/D Designer's Data Sheet TMOS E FET. MTW33N10E Power Field Effect Transistor Motorola Preferred Device TO 247 with Isolated Mounting Hole N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET This advanced TMOS E-FET is designed to withstand high 33 AMPERES energy in the avalanche and commutation modes. T... See More ⇒

Detailed specifications: MTW14N50E, MTW16N40E, MTW20N50E, MTW23N25E, MTW24N40E, MTW26N15E, MTW32N20EG, MTW32N25E, 5N65, MTW35N15E, MTW45N10E, MTW4N80E, MTW6N60E, MTW7N80E, MTW8N50E, MTY100N10E, MVB50P03HDL

Keywords - MTW33N10E MOSFET specs

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