MTW35N15E PDF and Equivalents Search

 

MTW35N15E Specs and Replacement

Type Designator: MTW35N15E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 855 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO-247AE

MTW35N15E substitution

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MTW35N15E datasheet

 ..1. Size:106K  motorola
 mtw35n15e.pdf pdf_icon

MTW35N15E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW35N15E/D Designer's Data Sheet MTW35N15E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 35 AMPERES 150 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.05 OHM energy in t... See More ⇒

 0.1. Size:169K  motorola
 mtw35n15erev3.pdf pdf_icon

MTW35N15E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW35N15E/D Designer's Data Sheet MTW35N15E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 35 AMPERES 150 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.05 OHM energy in t... See More ⇒

Detailed specifications: MTW16N40E, MTW20N50E, MTW23N25E, MTW24N40E, MTW26N15E, MTW32N20EG, MTW32N25E, MTW33N10E, IRF1010E, MTW45N10E, MTW4N80E, MTW6N60E, MTW7N80E, MTW8N50E, MTY100N10E, MVB50P03HDL, MVB50P03HDLT4G

Keywords - MTW35N15E MOSFET specs

 MTW35N15E cross reference

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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