MTW35N15E MOSFET. Datasheet pdf. Equivalent
Type Designator: MTW35N15E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 98 nC
trⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 855 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO-247AE
MTW35N15E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTW35N15E Datasheet (PDF)
mtw35n15e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW35N15E/DDesigner's Data SheetMTW35N15ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 35 AMPERES 150 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.05 OHMenergy in t
mtw35n15erev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW35N15E/DDesigner's Data SheetMTW35N15ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 35 AMPERES 150 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.05 OHMenergy in t
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: DMG2301L | IPP07N03L
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918