All MOSFET. MTW35N15E Datasheet

 

MTW35N15E Datasheet and Replacement


   Type Designator: MTW35N15E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 855 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-247AE
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MTW35N15E Datasheet (PDF)

 ..1. Size:106K  motorola
 mtw35n15e.pdf pdf_icon

MTW35N15E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW35N15E/DDesigner's Data SheetMTW35N15ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 35 AMPERES 150 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.05 OHMenergy in t

 0.1. Size:169K  motorola
 mtw35n15erev3.pdf pdf_icon

MTW35N15E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW35N15E/DDesigner's Data SheetMTW35N15ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 35 AMPERES 150 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.05 OHMenergy in t

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPD50N04S4L-08 | GSM3679S | SM9994DSO | 2SK0615 | IXFH110N10P | RSE002P03TL | PHX8ND50E

Keywords - MTW35N15E MOSFET datasheet

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