MTW45N10E Datasheet and Replacement
Type Designator: MTW45N10E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 234 nS
Cossⓘ - Output Capacitance: 1240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO-247AE
MTW45N10E substitution
MTW45N10E Datasheet (PDF)
mtw45n10e.pdf
MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTW45N10E/DDesigner's Data SheetMTW45N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 45 AMPERES 100 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.035 OHMenergy in
mtw45n10erev2.pdf
MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTW45N10E/DDesigner's Data SheetMTW45N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 45 AMPERES 100 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.035 OHMenergy in
Datasheet: MTW20N50E , MTW23N25E , MTW24N40E , MTW26N15E , MTW32N20EG , MTW32N25E , MTW33N10E , MTW35N15E , AON7506 , MTW4N80E , MTW6N60E , MTW7N80E , MTW8N50E , MTY100N10E , MVB50P03HDL , MVB50P03HDLT4G , MVGSF1N02L .
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