MTW45N10E PDF and Equivalents Search

 

MTW45N10E Specs and Replacement

Type Designator: MTW45N10E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 234 nS

Cossⓘ - Output Capacitance: 1240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO-247AE

MTW45N10E substitution

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MTW45N10E datasheet

 ..1. Size:97K  motorola
 mtw45n10e.pdf pdf_icon

MTW45N10E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW45N10E/D Designer's Data Sheet MTW45N10E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 45 AMPERES 100 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.035 OHM energy in... See More ⇒

 0.1. Size:155K  motorola
 mtw45n10erev2.pdf pdf_icon

MTW45N10E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW45N10E/D Designer's Data Sheet MTW45N10E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 45 AMPERES 100 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.035 OHM energy in... See More ⇒

Detailed specifications: MTW20N50E, MTW23N25E, MTW24N40E, MTW26N15E, MTW32N20EG, MTW32N25E, MTW33N10E, MTW35N15E, IRFB3607, MTW4N80E, MTW6N60E, MTW7N80E, MTW8N50E, MTY100N10E, MVB50P03HDL, MVB50P03HDLT4G, MVGSF1N02L

Keywords - MTW45N10E MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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