MTW45N10E Datasheet and Replacement
Type Designator: MTW45N10E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 234 nS
Cossⓘ - Output Capacitance: 1240 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO-247AE
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MTW45N10E Datasheet (PDF)
mtw45n10e.pdf
MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTW45N10E/DDesigner's Data SheetMTW45N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 45 AMPERES 100 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.035 OHMenergy in
mtw45n10erev2.pdf
MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTW45N10E/DDesigner's Data SheetMTW45N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 45 AMPERES 100 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.035 OHMenergy in
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 20N03L-TO252 | 2N6762JTXV
Keywords - MTW45N10E MOSFET datasheet
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History: 20N03L-TO252 | 2N6762JTXV
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