MTW6N60E PDF and Equivalents Search

 

MTW6N60E Specs and Replacement

Type Designator: MTW6N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-247AE

MTW6N60E substitution

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MTW6N60E datasheet

 ..1. Size:73K  motorola
 mtw6n60e.pdf pdf_icon

MTW6N60E

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 9.1. Size:170K  motorola
 mtw6n100e.pdf pdf_icon

MTW6N60E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW6N100E/D Designer's Data Sheet MTW6N100E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 With Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 6.0 AMPERES 1000 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 1.5 OHM scheme to prov... See More ⇒

 9.2. Size:195K  motorola
 mtw6n100erev3.pdf pdf_icon

MTW6N60E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW6N100E/D Designer's Data Sheet MTW6N100E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 With Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 6.0 AMPERES 1000 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 1.5 OHM scheme to prov... See More ⇒

Detailed specifications: MTW24N40E, MTW26N15E, MTW32N20EG, MTW32N25E, MTW33N10E, MTW35N15E, MTW45N10E, MTW4N80E, IRF530, MTW7N80E, MTW8N50E, MTY100N10E, MVB50P03HDL, MVB50P03HDLT4G, MVGSF1N02L, MVGSF1N02LT1G, MVGSF1N03L

Keywords - MTW6N60E MOSFET specs

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