MTW6N60E Datasheet and Replacement
Type Designator: MTW6N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-247AE
MTW6N60E substitution
MTW6N60E Datasheet (PDF)
mtw6n100e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW6N100E/DDesigner's Data SheetMTW6N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 With Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 6.0 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.5 OHMscheme to prov
mtw6n100erev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW6N100E/DDesigner's Data SheetMTW6N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 With Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 6.0 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.5 OHMscheme to prov
Datasheet: MTW24N40E , MTW26N15E , MTW32N20EG , MTW32N25E , MTW33N10E , MTW35N15E , MTW45N10E , MTW4N80E , AO4407 , MTW7N80E , MTW8N50E , MTY100N10E , MVB50P03HDL , MVB50P03HDLT4G , MVGSF1N02L , MVGSF1N02LT1G , MVGSF1N03L .
History: HM13N50F
Keywords - MTW6N60E MOSFET datasheet
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History: HM13N50F
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