All MOSFET. MTW6N60E Datasheet

 

MTW6N60E Datasheet and Replacement


   Type Designator: MTW6N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-247AE
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MTW6N60E Datasheet (PDF)

 ..1. Size:73K  motorola
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MTW6N60E

 9.1. Size:170K  motorola
 mtw6n100e.pdf pdf_icon

MTW6N60E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW6N100E/DDesigner's Data SheetMTW6N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 With Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 6.0 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.5 OHMscheme to prov

 9.2. Size:195K  motorola
 mtw6n100erev3.pdf pdf_icon

MTW6N60E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW6N100E/DDesigner's Data SheetMTW6N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 With Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 6.0 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.5 OHMscheme to prov

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: P1060AT | SUM60N02-3M9P | KNP3508A | GSM4936S | SVG105R4NSTR | 2SJ50 | ATM2N65TE

Keywords - MTW6N60E MOSFET datasheet

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