MTW6N60E MOSFET. Datasheet pdf. Equivalent
Type Designator: MTW6N60E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 175 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-247AE
MTW6N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTW6N60E Datasheet (PDF)
mtw6n100e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW6N100E/DDesigner's Data SheetMTW6N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 With Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 6.0 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.5 OHMscheme to prov
mtw6n100erev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW6N100E/DDesigner's Data SheetMTW6N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 With Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 6.0 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.5 OHMscheme to prov
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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