All MOSFET. MTW6N60E Datasheet

 

MTW6N60E Datasheet and Replacement


   Type Designator: MTW6N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-247AE
 

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MTW6N60E Datasheet (PDF)

 ..1. Size:73K  motorola
 mtw6n60e.pdf pdf_icon

MTW6N60E

 9.1. Size:170K  motorola
 mtw6n100e.pdf pdf_icon

MTW6N60E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW6N100E/DDesigner's Data SheetMTW6N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 With Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 6.0 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.5 OHMscheme to prov

 9.2. Size:195K  motorola
 mtw6n100erev3.pdf pdf_icon

MTW6N60E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW6N100E/DDesigner's Data SheetMTW6N100ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 With Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 6.0 AMPERES1000 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.5 OHMscheme to prov

Datasheet: MTW24N40E , MTW26N15E , MTW32N20EG , MTW32N25E , MTW33N10E , MTW35N15E , MTW45N10E , MTW4N80E , STP80NF70 , MTW7N80E , MTW8N50E , MTY100N10E , MVB50P03HDL , MVB50P03HDLT4G , MVGSF1N02L , MVGSF1N02LT1G , MVGSF1N03L .

History: KF3N50IZ | PSMN027-100XS | STD65N3LLH5 | 2SK2659

Keywords - MTW6N60E MOSFET datasheet

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