All MOSFET. MTW7N80E Datasheet

 

MTW7N80E Datasheet and Replacement


   Type Designator: MTW7N80E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 244 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-247AE
 

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MTW7N80E Datasheet (PDF)

 ..1. Size:140K  motorola
 mtw7n80e.pdf pdf_icon

MTW7N80E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW7N80E/DDesigner's Data SheetMTW7N80ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 With Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 7.0 AMPERES800 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.0 OHMscheme to provide

 0.1. Size:220K  motorola
 mtw7n80erev3.pdf pdf_icon

MTW7N80E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW7N80E/DDesigner's Data SheetMTW7N80ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 With Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 7.0 AMPERES800 VOLTSThis high voltage MOSFET uses an advanced terminationRDS(on) = 1.0 OHMscheme to provide

Datasheet: MTW26N15E , MTW32N20EG , MTW32N25E , MTW33N10E , MTW35N15E , MTW45N10E , MTW4N80E , MTW6N60E , IRLB4132 , MTW8N50E , MTY100N10E , MVB50P03HDL , MVB50P03HDLT4G , MVGSF1N02L , MVGSF1N02LT1G , MVGSF1N03L , MVGSF1N03LT1G .

History: BLS7G3135LS-350P | FDS7066N7 | TF2305B | HGT055N15S | LSE60R092GF | TDM3482

Keywords - MTW7N80E MOSFET datasheet

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