MTW7N80E PDF and Equivalents Search

 

MTW7N80E Specs and Replacement

Type Designator: MTW7N80E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 244 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-247AE

MTW7N80E substitution

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MTW7N80E datasheet

 ..1. Size:140K  motorola
 mtw7n80e.pdf pdf_icon

MTW7N80E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW7N80E/D Designer's Data Sheet MTW7N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 With Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 7.0 AMPERES 800 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 1.0 OHM scheme to provide... See More ⇒

 0.1. Size:220K  motorola
 mtw7n80erev3.pdf pdf_icon

MTW7N80E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW7N80E/D Designer's Data Sheet MTW7N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 With Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 7.0 AMPERES 800 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 1.0 OHM scheme to provide... See More ⇒

Detailed specifications: MTW26N15E, MTW32N20EG, MTW32N25E, MTW33N10E, MTW35N15E, MTW45N10E, MTW4N80E, MTW6N60E, CS150N03A8, MTW8N50E, MTY100N10E, MVB50P03HDL, MVB50P03HDLT4G, MVGSF1N02L, MVGSF1N02LT1G, MVGSF1N03L, MVGSF1N03LT1G

Keywords - MTW7N80E MOSFET specs

 MTW7N80E cross reference

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 MTW7N80E replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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