All MOSFET. MTY100N10E Datasheet

 

MTY100N10E Datasheet and Replacement


   Type Designator: MTY100N10E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 490 nS
   Cossⓘ - Output Capacitance: 3300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-264
 

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MTY100N10E Datasheet (PDF)

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MTY100N10E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTY100N10E/DDesigner's Data SheetMTY100N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high100 AMPERESenergy in the avalanche and commutation modes. This new energy100 VOLTS

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MTY100N10E

MTY100N10EPreferred DevicePower MOSFET100 Amps, 100 VoltsN-Channel TO-264This advanced Power MOSFET is designed to withstand highenergy in the avalanche and commutation modes. This new energyhttp://onsemi.comefficient design also offers a drain-to-source diode with fast recoverytime. Designed for high voltage, high speed switching applications in100 AMPERESpower supplies,

Datasheet: MTW32N25E , MTW33N10E , MTW35N15E , MTW45N10E , MTW4N80E , MTW6N60E , MTW7N80E , MTW8N50E , IRFP250 , MVB50P03HDL , MVB50P03HDLT4G , MVGSF1N02L , MVGSF1N02LT1G , MVGSF1N03L , MVGSF1N03LT1G , MVMBF0201NL , MVSF2N02EL .

History: OSG60R900AF | SIHFBC30A | STU3N45K3 | TPM2019-3 | VBJ2102M | SM6107PSU | TSM3548DCX6

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