MTY100N10E MOSFET Datasheet: N-Ch, 100V, 100A. Full specification with pinout and replacement list

MTY100N10E Specs and Replacement

Type Designator: MTY100N10E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 270 nC

tr ⓘ - Rise Time: 490 nS

Cossⓘ - Output Capacitance: 3300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO-264

MTY100N10E substitution

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MTY100N10E datasheet

..1. Size:185K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTY100N10E/D Designer's Data Sheet MTY100N10E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 100 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS... See More ⇒

..2. Size:207K onsemi
mty100n10e.pdf pdf_icon

MTY100N10E Preferred Device Power MOSFET 100 Amps, 100 Volts N-Channel TO-264 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy http //onsemi.com efficient design also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications in 100 AMPERES power supplies, ... See More ⇒

Detailed specifications: MTW32N25E, MTW33N10E, MTW35N15E, MTW45N10E, MTW4N80E, MTW6N60E, MTW7N80E, MTW8N50E, AON7506, MVB50P03HDL, MVB50P03HDLT4G, MVGSF1N02L, MVGSF1N02LT1G, MVGSF1N03L, MVGSF1N03LT1G, MVMBF0201NL, MVSF2N02EL