All MOSFET. MVMBF0201NL Datasheet

 

MVMBF0201NL Datasheet and Replacement


   Type Designator: MVMBF0201NL
   Marking Code: N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 1.4 nC
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: SOT-23
 

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MVMBF0201NL Datasheet (PDF)

 ..1. Size:99K  onsemi
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MVMBF0201NL

MMBF0201NL,MVMBF0201NLPower MOSFET300 mAmps, 20 VoltsN-Channel SOT-23http://onsemi.comThese miniature surface mount MOSFETs low RDS(on) assure300 mAMPS - 20 VOLTSminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications areRDS(on) = 1 Wdc-dc converters, power management in portable andbattery-power

 ..2. Size:164K  onsemi
 mmbf0201nl mvmbf0201nl.pdf pdf_icon

MVMBF0201NL

MMBF0201NL,MVMBF0201NLPower MOSFET300 mAmps, 20 VoltsN-Channel SOT-23www.onsemi.comThese miniature surface mount MOSFETs low RDS(on) assure300 mAMPS - 20 VOLTSminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications areRDS(on) = 1 Wdc-dc converters, power management in portable andbattery-powered

Datasheet: MTW8N50E , MTY100N10E , MVB50P03HDL , MVB50P03HDLT4G , MVGSF1N02L , MVGSF1N02LT1G , MVGSF1N03L , MVGSF1N03LT1G , IRFP250 , MVSF2N02EL , MVSF2N02ELT1G , MX2N4091 , MX2N4092 , MX2N4093 , MX2N4856 , MX2N4857 , MX2N4858 .

History: MVB50P03HDLT4G

Keywords - MVMBF0201NL MOSFET datasheet

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