All MOSFET. MVSF2N02ELT1G Datasheet

 

MVSF2N02ELT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: MVSF2N02ELT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.5 nC
   trⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT-23

 MVSF2N02ELT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MVSF2N02ELT1G Datasheet (PDF)

 ..1. Size:104K  onsemi
 mvsf2n02el mvsf2n02elt1g.pdf

MVSF2N02ELT1G MVSF2N02ELT1G

MGSF2N02EL,MVSF2N02ELPower MOSFET2.8 Amps, 20 Volts, N-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry.2.8 A, 20 VFeaturesRDS(on) = 85 mW (max) Low RDS(on) Provides Higher Efficiency and Extends Battery Life

 4.1. Size:118K  onsemi
 mgsf2n02el mvsf2n02el.pdf

MVSF2N02ELT1G MVSF2N02ELT1G

MGSF2N02EL,MVSF2N02ELMOSFET N-Channel,SOT-232.8 A, 20 Vwww.onsemi.comThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices ideal2.8 A, 20 Vfor use in space sensitive power management circuitry.RDS(on) = 85 mW (max)Features Low RDS(on) Provides Higher Efficiency and Extends Battery LifeN-Channel

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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