All MOSFET. MVSF2N02ELT1G Datasheet

 

MVSF2N02ELT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: MVSF2N02ELT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Total Gate Charge (Qg): 3.5 nC
   Rise Time (tr): 95 nS
   Drain-Source Capacitance (Cd): 130 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm
   Package: SOT-23

 MVSF2N02ELT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MVSF2N02ELT1G Datasheet (PDF)

 ..1. Size:104K  onsemi
mvsf2n02el mvsf2n02elt1g.pdf

MVSF2N02ELT1G
MVSF2N02ELT1G

MGSF2N02EL,MVSF2N02ELPower MOSFET2.8 Amps, 20 Volts, N-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry.2.8 A, 20 VFeaturesRDS(on) = 85 mW (max) Low RDS(on) Provides Higher Efficiency and Extends Battery Life

 4.1. Size:118K  onsemi
mgsf2n02el mvsf2n02el.pdf

MVSF2N02ELT1G
MVSF2N02ELT1G

MGSF2N02EL,MVSF2N02ELMOSFET N-Channel,SOT-232.8 A, 20 Vwww.onsemi.comThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices ideal2.8 A, 20 Vfor use in space sensitive power management circuitry.RDS(on) = 85 mW (max)Features Low RDS(on) Provides Higher Efficiency and Extends Battery LifeN-Channel

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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