MVSF2N02ELT1G Datasheet and Replacement
Type Designator: MVSF2N02ELT1G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOT-23
MVSF2N02ELT1G substitution
MVSF2N02ELT1G Datasheet (PDF)
mvsf2n02el mvsf2n02elt1g.pdf

MGSF2N02EL,MVSF2N02ELPower MOSFET2.8 Amps, 20 Volts, N-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry.2.8 A, 20 VFeaturesRDS(on) = 85 mW (max) Low RDS(on) Provides Higher Efficiency and Extends Battery Life
mgsf2n02el mvsf2n02el.pdf

MGSF2N02EL,MVSF2N02ELMOSFET N-Channel,SOT-232.8 A, 20 Vwww.onsemi.comThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices ideal2.8 A, 20 Vfor use in space sensitive power management circuitry.RDS(on) = 85 mW (max)Features Low RDS(on) Provides Higher Efficiency and Extends Battery LifeN-Channel
Datasheet: MVB50P03HDL , MVB50P03HDLT4G , MVGSF1N02L , MVGSF1N02LT1G , MVGSF1N03L , MVGSF1N03LT1G , MVMBF0201NL , MVSF2N02EL , 5N65 , MX2N4091 , MX2N4092 , MX2N4093 , MX2N4856 , MX2N4857 , MX2N4858 , MX2N4859 , MX2N4860 .
History: FDU6644 | BUK9607-30B | 2N4859A | MTP7P06 | NCE01P05S | DMJ70H601SK3 | FQB19N20TM
Keywords - MVSF2N02ELT1G MOSFET datasheet
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History: FDU6644 | BUK9607-30B | 2N4859A | MTP7P06 | NCE01P05S | DMJ70H601SK3 | FQB19N20TM



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