All MOSFET. MX2N5115 Datasheet

 

MX2N5115 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MX2N5115
   Type of Transistor: JFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 200 °C
   trⓘ - Rise Time: 20 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
   Package: TO-18

 MX2N5115 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MX2N5115 Datasheet (PDF)

 ..1. Size:43K  microsemi
 mx2n5114 mx2n5115 mx2n5116.pdf

MX2N5115 MX2N5115

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV EquivalentABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test C

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NTGS3433

 

 
Back to Top