All MOSFET. MX2N5116 Datasheet

 

MX2N5116 Datasheet and Replacement


   Type Designator: MX2N5116
   Type of Transistor: JFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 200 °C
   tr ⓘ - Rise Time: 35 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 175 Ohm
   Package: TO-18
 

 MX2N5116 substitution

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MX2N5116 Datasheet (PDF)

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MX2N5116

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV EquivalentABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test C

Datasheet: MX2N4856 , MX2N4857 , MX2N4858 , MX2N4859 , MX2N4860 , MX2N4861 , MX2N5114 , MX2N5115 , 2N60 , MTP3N45 , MTP3N50 , MTM3N75 , MTM3N80 , 125N10T , 2SJ156 , 2SJ171 , 2SK2071-01L .

History: MX2N4857 | MX2N4861 | MTP3N50

Keywords - MX2N5116 MOSFET datasheet

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