MX2N5116 PDF and Equivalents Search

 

MX2N5116 Specs and Replacement

Type Designator: MX2N5116

Type of Transistor: JFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.05 A

Tj ⓘ - Maximum Junction Temperature: 200 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 175 Ohm

Package: TO-18

MX2N5116 substitution

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MX2N5116 datasheet

 ..1. Size:43K  microsemi
 mx2n5114 mx2n5115 mx2n5116.pdf pdf_icon

MX2N5116

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test C... See More ⇒

Detailed specifications: MX2N4856, MX2N4857, MX2N4858, MX2N4859, MX2N4860, MX2N4861, MX2N5114, MX2N5115, 2N60, MTP3N45, MTP3N50, MTM3N75, MTM3N80, 125N10T, 2SJ156, 2SJ171, 2SK2071-01L

Keywords - MX2N5116 MOSFET specs

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