2SK610 Specs and Replacement
Type Designator: 2SK610
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO3P
2SK610 substitution
- MOSFET ⓘ Cross-Reference Search
2SK610 datasheet
2sk610.pdf
isc N-Channel MOSFET Transistor 2SK610 FEATURES Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High Voltage. High speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol... See More ⇒
2sk615.pdf
Silicon MOS FETs (Small Signal) 2SK615 2SK615 Silicon N-Channel MOS Unit mm For switching 6.9 0.1 2.5 0.1 1.5 Features 1.5 R0.9 1.0 R0.9 Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL Easy automatic- /manual-insertion due to M type package. Self-fix- 0.85 ing to printed circuits board. 0.55 0.1 0.45 0.05 3 2 1 Absolute Maximu... See More ⇒
Detailed specifications: 2SK399, 2SK400, 2SK429, 2SK562, 2SK564, 2SK566, 2SK602, 2SK604, EMB04N03H, 2SK616, 2SK617, 2SK622, 2SK627, 2SK629, 2SK630, 2SK631, 2SK632
Keywords - 2SK610 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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