2SK610 Datasheet and Replacement
Type Designator: 2SK610
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO3P
2SK610 substitution
2SK610 Datasheet (PDF)
2sk610.pdf

isc N-Channel MOSFET Transistor 2SK610FEATURESDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh Voltage.High speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
2sk615.pdf

Silicon MOS FETs (Small Signal) 2SK6152SK615Silicon N-Channel MOSUnit : mmFor switching6.9 0.1 2.5 0.11.5 Features 1.5 R0.9 1.0R0.9 Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL Easy automatic- /manual-insertion due to M type package. Self-fix-0.85ing to printed circuits board.0.55 0.1 0.45 0.053 2 1 Absolute Maximu
Datasheet: 2SK399 , 2SK400 , 2SK429 , 2SK562 , 2SK564 , 2SK566 , 2SK602 , 2SK604 , 2SK3918 , 2SK616 , 2SK617 , 2SK622 , 2SK627 , 2SK629 , 2SK630 , 2SK631 , 2SK632 .
History: CED6186 | DMN2058U | AP2323GN | GSM8473 | INJ0011AM1 | SI1002R | RFP50N05L
Keywords - 2SK610 MOSFET datasheet
2SK610 cross reference
2SK610 equivalent finder
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History: CED6186 | DMN2058U | AP2323GN | GSM8473 | INJ0011AM1 | SI1002R | RFP50N05L



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