2SK610 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK610 FEATURES Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High Voltage. High speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

Silicon MOS FETs (Small Signal) 2SK615 2SK615 Silicon N-Channel MOS Unit mm For switching 6.9 0.1 2.5 0.1 1.5 Features 1.5 R0.9 1.0 R0.9 Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL Easy automatic- /manual-insertion due to M type package. Self-fix- 0.85 ing to printed circuits board. 0.55 0.1 0.45 0.05 3 2 1 Absolute Maximu

Silicon MOS FETs (Small Signal) 2SK614 2SK614 Silicon N-Channel MOS Unit mm For switching 5.0 0.2 4.0 0.2 Features Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL +0.2 +0.2 0.45 0.1 0.45 0.1 1.27 1.27 Absolute Maximum Ratings (Ta = 25 C) 1 Source Parameter Symbol Rating Unit 2 Drain 3 Gate Drain-Source voltage VDS 80

isc N-Channel MOSFET Transistor 2SK616 FEATURES Drain Current I =22A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS

isc N-Channel MOSFET Transistor 2SK617 FEATURES Drain Current I =1A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay dri