All MOSFET. 2SK756 Datasheet

 

2SK756 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK756

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm

Package: TO220F

2SK756 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK756 Datasheet (PDF)

1.1. 2sk756.pdf Size:234K _update-mosfet

2SK756
2SK756

isc N-Channel MOSFET Transistor 2SK756 DESCRIPTION ·Drain Current –I =8A@ T =25℃ D C ·Drain Source Voltage- : V = 200V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMU

5.1. 2sk757.pdf Size:232K _update-mosfet

2SK756
2SK756

isc N-Channel MOSFET Transistor 2SK757 DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V = 200V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 20

5.2. 2sk759.pdf Size:234K _update-mosfet

2SK756
2SK756

isc N-Channel MOSFET Transistor 2SK759 DESCRIPTION ·Drain Current –I =8A@ T =25℃ D C ·Drain Source Voltage- : V = 250V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching applications such as switching regulators, converters, solenoid and relay d

 5.3. 2sk753.pdf Size:233K _update-mosfet

2SK756
2SK756

isc N-Channel MOSFET Transistor 2SK753 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V = 160V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 160

5.4. 2sk750.pdf Size:235K _update-mosfet

2SK756
2SK756

isc N-Channel MOSFET Transistor 2SK750 DESCRIPTION ·Drain Current –I = 20A@ T =25℃ D C ·Drain Source Voltage- : V = 100V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 1

 5.5. 2sk751.pdf Size:240K _update-mosfet

2SK756
2SK756

isc N-Channel MOSFET Transistor 2SK751 DESCRIPTION ·Drain Current –I = 20A@ T =25℃ D C ·Drain Source Voltage- : V = 100V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 1

5.6. 2sk752.pdf Size:233K _update-mosfet

2SK756
2SK756

isc N-Channel MOSFET Transistor 2SK752 DESCRIPTION ·Drain Current –I = 3A@ T =25℃ D C ·Drain Source Voltage- : V = 160V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching applications such as switching regulators, converters,relay drivers. ABSOLUTE MAXIMUM RATINGS(T =2

5.7. 2sk755.pdf Size:233K _update-mosfet

2SK756
2SK756

isc N-Channel MOSFET Transistor 2SK755 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =200V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 200

5.8. 2sk758.pdf Size:234K _update-mosfet

2SK756
2SK756

isc N-Channel MOSFET Transistor 2SK758 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V = 250V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching applications such as switching regulators, converters, solenoid and relay d

5.9. 2sk754.pdf Size:232K _update-mosfet

2SK756
2SK756

isc N-Channel MOSFET Transistor 2SK754 DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V = 160V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 16

5.10. 2sk758.pdf Size:33K _panasonic

2SK756
2SK756

Power F-MOS FETs 2SK758 2SK758 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) : RDS(on) = 0.45?(typ) 5.5 0.2 2.7 0.2 High-speed switching : tf = 45ns(typ) No secondary breakdown o3.1 0.1 Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive 2.54 0.25 5.08 0.5 A

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top