All MOSFET. SPD22N08S2L-50 Datasheet

 

SPD22N08S2L-50 Datasheet and Replacement


   Type Designator: SPD22N08S2L-50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO252
 

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SPD22N08S2L-50 Datasheet (PDF)

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SPD22N08S2L-50

SPD22N08S2L-50OptiMOS Power-TransistorProduct SummaryFeatureVDS 75 V N-ChannelRDS(on) 50 m Enhancement modeID 25 A Logic LevelP- TO252 -3-11 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPD22N08S2L-50 P- TO252 -3-11 Q67060-S60622N08L50Maximum Ratings, at Tj = 25 C, unless otherwise specified

Datasheet: IRFP256 , IRFP257 , SUD40N06-25L , DTU40N06 , SUP40N06-25L , SUB40N06-25L , BR80N08A , KIA2806A , K4145 , SPD50N06S2-14 , SPN02N60C3 , SPP80N06S2-05 , SPB80N06S2-05 , SPP80N06S2L-07 , SPB80N06S2L-07 , SPP80N06S2L-09 , SPB80N06S2L-09 .

History: IPI04N03LA | WML12N100C2 | MTE05N10FP

Keywords - SPD22N08S2L-50 MOSFET datasheet

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