SPN02N60C3 PDF and Equivalents Search

 

SPN02N60C3 Specs and Replacement

Type Designator: SPN02N60C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: SOT223

SPN02N60C3 substitution

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SPN02N60C3 datasheet

 ..1. Size:256K  infineon
 spn02n60c3.pdf pdf_icon

SPN02N60C3

SPN02N60C3 Rev. 2.1 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 3 New revolutionary high voltage technology ID 0.4 A Ultra low gate charge SOT223 Extreme dv/dt rated 4 Ultra low effective capacitances 3 2 1 VPS05163 Type Package Ordering Code Marking SPN02N60C3 SOT223 Q67040-S4553 02N60C3 Maximum Ratings Parameter Symbol Value Unit A C... See More ⇒

Detailed specifications: SUD40N06-25L , DTU40N06 , SUP40N06-25L , SUB40N06-25L , BR80N08A , KIA2806A , SPD22N08S2L-50 , SPD50N06S2-14 , IRF4905 , SPP80N06S2-05 , SPB80N06S2-05 , SPP80N06S2L-07 , SPB80N06S2L-07 , SPP80N06S2L-09 , SPB80N06S2L-09 , SPP80N06S2L-H5 , SPB80N06S2L-H5 .

Keywords - SPN02N60C3 MOSFET specs

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