All MOSFET. G1003 Datasheet

 

G1003 Datasheet and Replacement


   Type Designator: G1003
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.4 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
   Package: SOT-23-3L
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G1003 Datasheet (PDF)

 ..1. Size:658K  gfd
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G1003

G1003 Description The G1003 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be Dused in a wide variety of applications. GGeneral Features V = 100V,I = 5A DS DmRDS(ON)

 0.1. Size:2145K  goford
 g1003a.pdf pdf_icon

G1003

GOFORDG1003ADescription The G1003A uses advanced trench technology and Ddesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. It is ESD protected. It is ESD protected.It is ESD protected.GGeneral Features VDSS RDS(ON) IDS @10V (typ)Schematic diagram 5Am100V 135 High density cell design fo

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