G1003 Description The G1003 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be Dused in a wide variety of applications. GGeneral Features V = 100V,I = 5A DS DmRDS(ON)

GOFORDG1003ADescription The G1003A uses advanced trench technology and Ddesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. It is ESD protected. It is ESD protected.It is ESD protected.GGeneral Features VDSS RDS(ON) IDS @10V (typ)Schematic diagram 5Am100V 135 High density cell design fo