G1818 MOSFET Datasheet: P-Ch, 20V, 2.6A. Full specification with pinout and replacement list

G1818 Specs and Replacement

Type Designator: G1818

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOT-23

G1818 substitution

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G1818 datasheet

..1. Size:1888K gfd
g1818.pdf pdf_icon

G1818 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The G1818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -2.6A RDS(ON) = 70 m @ VGS=-2.5V ( Typ) ... See More ⇒

0.1. Size:181K renesas
rej03g1818 rjl6015dpkds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: SPB80N06S2L-07, SPP80N06S2L-09, SPB80N06S2L-09, SPP80N06S2L-H5, SPB80N06S2L-H5, SPP100N06S2L-05, SPB100N06S2L-05, G1003, 5N65, G2002L, GKI03026, GKI03039, GKI03061, GKI03080, GKI04031, GKI04048, GKI04076