All MOSFET. G1818 Datasheet

 

G1818 MOSFET. Datasheet pdf. Equivalent


   Type Designator: G1818
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.3 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT-23

 G1818 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

G1818 Datasheet (PDF)

 ..1. Size:1888K  gfd
 g1818.pdf

G1818 G1818

G1818 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe G1818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -2.6A RDS(ON) = 70 m @ VGS=-2.5V ( Typ)

 0.1. Size:181K  renesas
 rej03g1818 rjl6015dpkds.pdf

G1818 G1818

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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